An Open-Access Atom Probe Tomography Mass Spectrum Database

Atom probe tomography in nanoelectronics

The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants a...

An environmental transfer hub for multimodal atom probe tomography

Environmental control during transfer between instruments is required for samples sensitive to air or thermal exposure to prevent morphological or chemical changes prior to analysis. Atom probe tomography is a rapidly expanding technique for three-dimensional structural and chemical analysis, but commercial instruments remain limited to loading specimens under ambient conditions. In this study,...

Toward atom probe tomography of microelectronic devices

Atom Probe Tomography of Oxide Scales

Atom probe tomography, APT, is the only microstructural method that can routinely analyse and position individual atoms in a material with a spatial resolution of 0.1-0.5 nm. Recent implementation of pulsed-laser to APT made investigation of less conducting materials, such as oxides, feasible. In this paper a short description of the principle of the techniques is presented. It is followed by e...

Dynamic reconstruction for atom probe tomography.

Progress in the reconstruction for atom probe tomography has been limited since the first implementation of the protocol proposed by Bas et al. in 1995. This approach and those subsequently developed assume that the geometric parameters used to build the three-dimensional atom map are constant over the course of an analysis. Here, we test this assumption within the analyses of low-alloyed mater...